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PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFA261702E Package H-30275-4
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 25 Efficiency (%) 20 15 10 5 0 20 25 30 35 40 45 50 Output Power (dBm) Efficiency EVM: = 2.62 GHz EVM: = 2.68 GHz EVM: = 2.65 GHz -20 EVM (dBc) -25 -30 -35 -40 -45
Features
* * * Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical WiMAX performance at 2650 MHz, 28 V - Average output power = 32 W - Linear gain = 15 dB - Efficiency = 20% - Error vector magnitude = -29 dB Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power
* * *
RF Characteristics
WiMAX Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 32 W average = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic
Gain Drain Efficiency Error Vector Magnitude
Symbol
Gps
Min
-- -- --
Typ
15 20 -29
Max
-- -- --
Unit
dB % dB
D
EVM
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 170 W PEP, = 2650 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
14 31 --
Typ
15 33 -30
Max
-- -- -27
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- -- --
Typ
-- -- -- 0.08 2.5 --
Max
-- 1.0 10.0 -- -- 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1800 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 170 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 643 3.68 -40 to +150 0.272
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTFA261702E V1
Package Type
H-30275-4
Package Description
Thermally-enhanced slotted flange, push-pull
Marking
PTFA261702E
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA, = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 -20 EVM (dB) -25 -30 -35 -40 -45 20 25 30 35 40 45 50 Output Power (dBm) TCASE = 25C TCASE = 90C
EVM (dB)
WiMAX Performance
VDD = 28 V, = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 -25 -30 -35 -40 -45 -50 15 20 25 30 35 IDQ = 1800 mA 40 45 50 IDQ = 2000 mA IDQ = 1600 mA
Output Power (dBm)
Gain vs. Output Power
VDD = 28 V, = 2650 MHz
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 1800 mA 1 = 2619 MHz, 2 = 2620 MHz;
-20
16.5 16.0
1 = 2679 MHz, 2 = 2680 MHz = 2680 MHz = 2620 MHz 3rd Order
IDQ = 2200 mA IDQ = 1800 mA
-30
Power Gain (dB)
IMD (dBc)
15.5 15.0 14.5 14.0 41 43 45 47 49 51 53
-40 -50 -60
IDQ = 1400 mA
5th
-70 38 40 42
7th
44
46
48
50
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 10
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 1800 mA, = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF
30 -20
30
IS-95 CDMA Performance
VDD = 28 V, IDQ = 1800 mA, = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF TCASE = 25C TCASE = 90C
Adj. Ch. Power Ratio (dBc)
25
-30
Drain Efficiency (%)
20 15 10 5 0 35 37
Adj 885 kHz Alt1 1.25 MHz
Drain Efficiency (%)
24 18 Efficiency 12 6 0 35 37 39 41 Alt1 1.25 MHz 43 45 47 Adj 885 kHz
-30 -35 -40 -45 -50 -55 -60 -65 -70
-40 -50 -60 -70 -80
39
41
43
45
47
Output Power (dBm), Avg.
Output Power (dBm), Avg.
CW Sweep in a Broadband Test Fixture
VDD = 28 V, IDQ = 1800 mA, POUT = 50 dBm
Output Power vs. Supply Voltage
IDQ = 1800 mA, = 2680 MHz
19 18
40 35
53.0
Efficiency (%)
30 25 20 15 10 2600
Gain (dB)
Efficiency
17 16 15 14
Output Power (dBm)
52.5
52.0
Gain
51.5
51.0
2620 2640 2660 2680 13 2700
23
25
27
29
31
33
Supply Voltage (V)
Frequency (MHz)
Data Sheet
4 of 10
Rev. 01.1, 2009-02-20
Adj. Ch. Power Ratio (dBc)
Efficiency
-20 -25
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1800 mA, = 2680 MHz
18 17 16 60
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.37 A 1.11 A 1.85 A 2.78 A 5.56 A 8.34 A
Normalized Bias Voltage (V)
TCASE = 25C Drain Efficiency (%) TCASE = 90C Gain
50 40 30
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100
Gain (dB)
15 14 13 12 11 10 10
Efficiency
20 10 210
50
90
130
170
Output Power (W)
Case Temperature (C)
Broadband Circuit Impedance
Z0 = 50
Z Source Z Load
D S
G G
Z Source
0.2
0.1
0.3
D
2600 MHz
2700 MHz
Frequency
MHz 2600 2620 2640 2660 2680 2700 R
Z Source
jX -1.2 -1.2 -1.1 -0.9 -0.8 -0.6 8.9 9.1 9.2 9.3 9.4 9.5
Z Load
R 7.0 6.6 6.2 5.9 5.7 5.4 jX -11.9 -11.5 -11.2 -10.9 -10.5 -10.2
0. 2
Z Load
2700 MHz 2600 MHz
Data Sheet
5 of 10
Rev. 01.1, 2009-02-20
0.4
Data Sheet
VDD
Reference Circuit
C1 0.001F
R2 1.3K V
R1 1.2K V
QQ1 LM7805
Q1 BCP56
C2 0.001F
C3 0.001F
Confidential, Limited Internal Distribution
Reference circuit block diagram for = 2680 MHz
l20
C7 0.1F R8 10 V C8 10F C9 3.3pF C15 3.3pF C16 2000pF
R3 2K V
R4 2K V
R5 10 V
VGG
R6 1K V
l19
l18
l34
l35
C17 1F
l36
C18 2.2F C19 10F 50V
VDD
6 of 10
l33
DUT C10 4.5pF
C4 10F 35V
C5 0.1F
R7 1K V
C6 0.1F
l11 l13 l24 l10
C11 4.5pF
l12 l14 l25 l15 l16 l17
C26 4.5pF
l26
C25 0.3pF
l27
l28
l29
l30 l43
C27 4.5pF
l31
l32
RF_OUT
RF_IN
l1 l8
R9 10 V
l2 l9
l3
l4
l5
l6
l7
l37
l38
l39
l40
l41
l42
l44 l45
C20 3.3pF C21 2000pF
C12 0.1F
l23
C13 10F C14 3.3pF
l22
l21
l46
C22 1F
l47
C23 2.2F C24 10F 50V
VDD
PTFA261702E
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
DUT PCB PTFA261702E 0.76 mm [.030"] thick, e r = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper
Microstrip Microstrip
l1 l2 l3 l4, l12, l28, l29, l41, l42 l5, l13 l6, l14 l7, l15 l8, l16 l9, l17 l10 l11 l18, l21 l19, l22 l20, l23, l24, l37 l25, l38 l26, l39 l27, l40 l30 l31 l32 l33, l44 l34, l45 l35, l46 l36, l47 l43
Electrical Characteristics at 2680 MHz
0.450 0.296 0.049 0.021 0.010 0.153 0.028 0.067 0.015 0.099 0.463 0.193 0.105 0.043 0.020 0.101 0.019 0.132 0.044 0.258 0.229 0.083 0.225 0.060 0.043 0.553 , 49.9 , 35.5 , 49.9 , 34.0 , 40.6 , 21.0 , 14.6 , 8.2 , 8.2 , 44.6 , 49.9 , 49.9 , 49.9 , 49.9 , 5.9 , 5.9 , 5.9 , 50.3 , 50.3 , 35.5 , 49.9 , 49.9 , 49.9 , 49.9 , 49.9 , 49.9
Dimensions: L x W (mm) Dimensions: L x W (mm)
30.45 x 1.70 19.56 x 2.84 3.30 x 1.70 1.40 x 3.02 0.69 x 2.34 9.80 x 5.66 1.78 x 8.81 4.11 x 16.94 0.94 x 16.94 6.65 x 2.03 31.32 x 1.70 13.06 x 1.70 7.11 x 1.70 2.92 x 1.70 1.24 x 24.16 6.17 x 24.16 1.19 x 24.16 8.97 x 1.68 2.95 x 1.68 17.04 x 2.84 15.52 x 1.70 5.64 x 1.70 15.24 x 1.70 4.06 x 1.70 2.92 x 1.70 37.44 x 1.70
Dimensions: L x W (in.) Dimensions: L x W (in.)
1.199 x 0.067 0.770 x 0.112 0.130 x 0.067 0.055 x 0.119 0.027 x 0.092 0.386 x 0.223 0.070 x 0.347 0.162 x 0.667 0.037 x 0.667 0.262 x 0.080 1.233 x 0.067 0.514 x 0.067 0.280 x 0.067 0.115 x 0.067 0.049 x 0.951 0.243 x 0.951 0.047 x 0.951 0.353 x 0.066 0.116 x 0.066 0.671 x 0.112 0.611 x 0.067 0.222 x 0.067 0.6 x 0.067 0.16 x 0.067 0.115 x 0.067 1.474 x 0.067
Data Sheet
7 of 10
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
VDD
R5 C5 R6 R7 QQ1 R4 C4 C3 R3 R1 R2 C1 C2 Q1 C7 C8 C9 C15 C19 VDD
RF_OUT
C18
C17 C16
C6
R8
C10
C25
C26 C27
C11
RO4350_.030
R9
A261702_01
C14 C21 C13 C12 C20 C24 V DD C22 C23
a26170e_cd_21508 -
RF_IN
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C6, C7, C12 C8, C13 C9, C14, C15, C20 C10, C11, C26, C27 C16, C21 C17, C22 C18, C23 C19, C24 C25 Q1 QQ1 R1 R2 R3 R4 R5, R8, R9 R6, R7
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 10 F Ceramic capacitor, 3.3 pF Ceramic capacitor, 4.5 pF Capacitor, 2000 pF Ceramic capacitor, 1 F Capacitor, 2.2 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 0.3 pF Transistor Voltage regulator Chip resistor 1.2K ohms Chip resistor 1.3K ohms Chip resistor 2K ohms Potentiometer 2K ohms Chip resistor 10 ohms Chip resistor 1K ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Digi-Key Garrett Electronics ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 490-1819-2-ND 100B 3R3 100B 4R5 100B 203JW 445-1411-2-ND 445-1447-2-ND TPSE106K050R0400 100B 0R3 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND
*Gerber files for this circuit available on request. Data Sheet 8 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-30275-4
2X 455 X 1.19 [.047]
C L
13.72 [.540]
C L
2X R 1.59 [.063]
D
16.610.51 [.654.020] 9.40 +0.10 -0.15 [.370 +.004 ] -.006
D
C L
2X 3.18 [.125]
LID 9.14 -0.15 [.360 +.004 ] -.006
+0.10
S
4X 3.230.25 [.127.010]
Flange 10.16 [.400]
G
G
4X 11.68 [.460]
35.56 [1.400] 31.240.28 [1.230.011]
C L
1.63 [.064]
4.550.38 [.179.015] 0.038 [.0015] -AH-30275-4_po_8-1-2007
41.15 [1.620]
2.18 [.086] SPH
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.13 +0.051/-0.025 [.005 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 10
Rev. 01.1, 2009-02-20
PTFA261702E Confidential, Limited Internal Distribution Revision History: 2009-02-20 Previous Version: none Page Subjects (major changes since last revision) 8 4-10 to 14 Fixed typing error Refine existing frames, new frames for final page. Misc updates.
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 01.1, 2009-02-20

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